surface - mount photodiode assembly sd019 - 10 1 - 411 www.advancedphotonix.com precision C control C results inf ormation in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for possible inaccuracies or omission. specifications are subject to change without notice. p age 1 / 2 rev 03 - 22 - 15 ? 20 15 advanced photonix, inc. all rights reserved. advanced photonix inc. 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987 - 0146 ? fax (805) 484 - 9935 description features the sd 019 - 1 0 1 - 411 is a silicon pin 0.18mm2 active area, uv enhanced photodiode, assembled in a 0805 smt package. ? small footprint ? low capacitance ? high speed reliability applications this api high - reliability detector is in principle able to meet military test requirements (mil - std - 750, mil - std - 883) after p roper screening and group test. contact api for recommendations on specific test conditions and procedures. ? industrial sensors ? light management ? handheld devices absolute maximum ratings t a = 25c unless otherwise noted parameter min m ax units reverse voltage - 50 v operating temperature - 40 +105 c storage temperature - 50 +125 c soldering temperature* - +260 c a d v anced ph o t onix, inc.
surface - mount photodiode assembly sd019 - 10 1 - 411 www.advancedphotonix.com precision C control C results inf ormation in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for possible inaccuracies or omission. specifications are subject to change without notice. p age 2 / 2 rev 03 - 22 - 15 ? 20 15 advanced photonix, inc. all rights reserved. advanced photonix inc. 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987 - 0146 ? fax (805) 484 - 9935 opto - electrical parameters t a = 23 c unless noted otherwise parameter test conditions min typ max units forward voltage i f =10 ma 0.5 0.8 1.3 v light current (2 8 5 6k) v r = 5v; h = 1000 lux - 3.2 - ? a breakdown voltage i r = 100 ? a 50 - - v shunt resistance v bias = 10 mv - 2.0 - g ? dark current v r = 10 v - - 0.5 na junction capacitance v r = 5v; f = 1000 khz - 6.0 - pf rise time v r = 3v; r i = 1000 ? - 1.0 - s typical performance spectral response a d v anced ph o t onix, inc.
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